diodes applications
Rectification (frequency shifting)
Half-Wave Rectification
Full-Wave Retification
Bridge Full-Wave Rectifier
Clamp
Clippers/Limiters
Limiting with ordinary diodes
Limiting with Zener diodes
Multiplier
Doubler
Tripler
Diode Logic
Mixer Circuits
Labels: diodes applications
diodes 1n4007
Features
• Diffused Junction
• High Current Capability and Low Forw
• Surge Overload Rating to 30A Peak
• Low Reverse Leakage Current
• Lead Free Finish, RoHS Compliant
Mechanical Data
• Case: DO-41
• Case Material: Molded Plastic. UL Fla
Rating 94V-0
• Moisture Sensitivity: Level 1 per J-ST
• Terminals: Finish - Bright Tin. Plated
MIL-STD-202, Method 208
• Polarity: Cathode Band
• Mounting Position: Any
• Ordering Information: See Page 2
• Marking: Type Number
• Weight: 0.30 grams (approximate)
1N4007 - 1.0A RECTIFIER - Diodes Incorporated
Labels: diodes2n2222 transistor
2N2222A
NPN switching transistors
FEATURES
• High current (max. 800 mA)
• Low voltage (max. 40 V).
APPLICATIONS
• Linear amplification and switching.
DESCRIPTION
NPN switching transistor in a TO-18 metal package.
PNP complement: 2N2907A.
collector-base voltage 2n2222 =60V
collector-base voltage 2n2222A =75V
collector-emitter voltage 2N2222 =30V
collector-emitter voltage 2N2222A =40V
transition frequency 2N2222 =250MH
transition frequency 2N2222A =300MH
collector current (DC) =800MA
TRANSISTOR
2sd1047
NPN PLANAR SILICON TRANSISTOR
AUDIO POWER AMPLIFIER
DC TO DC CONVERTER
Complementary to 2SB817
High Current Capability
High Power Dissipation
ABSOLUTE MAXIMUM RATING (TA=25℃ )
Collector-Base Voltage=200v
Collector-Emitter Voltage=140v
Emitter-Base voltage=6
Collector Current DC =10A
Collector Dissipation =100W
Labels: TRANSISTOR
